Study Of Solution Processed Cu(In,Ga)S2 By Post-Deposition Treatments

Autor:	Johnathan C. Armstrong, Tar-Pin Chen, Jingbiao Cui
Rok vydání:	2014
Předmět:	Materials science Open-circuit voltage business.industry Band gap Photovoltaic system Microbiology Copper indium gallium selenide solar cells Grain size law.invention law Solar cell Deposition (phase transition) Optoelectronics Thin film business
Zdroj:	MRS Proceedings. 1670
ISSN:	1946-4274 0272-9172
DOI:	10.1557/opl.2014.669
Popis:	In this study, we have investigated various approaches to improve CIGS solar cells after thin film deposition. CIGS devices have been fabricated by a hydrazine solution based process. Post-deposition treatments by sulfurization were studied with focuses on the change of material structures and physical properties. Sulfurization has shown to increase grain size and band gap of the absorber layers at higher temperatures. This property change has shown a direct impact on open circuit voltage of the solar cell devices. Through these post-deposition processes, improved quality of CIGS materials can be obtained and the associated solar cell devices show better performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9e13d33bcf2ce8d223bcc72fe6b765a5 https://doi.org/10.1557/opl.2014.669 Zobrazit plný text záznamu Full text from SpringerLink