High-temperature magnetoresistance study of a magnetic tunnel junction

Autor:	James Hung, D. C. Chen, Yeong-Der Yao, M.J. Kao, Y.S. Chen, W.C. Chen, C.M. Chen, W.H. Wang
Rok vydání:	2006
Předmět:	Tunnel magnetoresistance Materials science Condensed matter physics Magnetoresistance Electrode Thermal stability Thermal treatment Condensed Matter Physics Spin (physics) Layer (electronics) Quantum tunnelling Electronic Optical and Magnetic Materials
Zdroj:	Journal of Magnetism and Magnetic Materials. 304:e297-e299
ISSN:	0304-8853
DOI:	10.1016/j.jmmm.2006.02.062
Popis:	The thermal stability and the spin transportation phenomenon at room temperature and 140 ° C of a series of magnetic tunneling junctions with the structure of bottom electrode/PtMn/Pinned layer/ AlO x /CoFe/NiFe/top electrode have been investigated. The MR ratio decreases from 33.5% at room temperature to 29% at 140 ° C. The MR ratio at room temperature increases roughly 0.8% after thermal treatment at temperatures above 60 ° C. This is related to the thermal relaxation of the strains existing in the samples.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9e0d88d5cbe6dd0e0650da3abfc3b59e https://doi.org/10.1016/j.jmmm.2006.02.062 Zobrazit plný text záznamu Full Text from ScienceDirect