Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness
| Autor: | Joseph H. Ngai, M. Chrysler, Ricky Hensley, Hanghui Chen, Tongjie Chen, Zheng Hui Lim, Kamyar Ahmadi-Majlan, Dong Su, Divine Kumah, Patrick Conlin |
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| Rok vydání: | 2018 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Scattering Heterojunction Insulator (electricity) 02 engineering and technology Electron 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Layer thickness Condensed Matter::Materials Science 0103 physical sciences Condensed Matter::Strongly Correlated Electrons Fermi liquid theory Metal insulator 010306 general physics 0210 nano-technology |
| Zdroj: | Applied Physics Letters. 112:193104 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5018069 |
| Popis: | We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies. |
| Databáze: | OpenAIRE |
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