Chemical bonding and defect states of LPCVD grown silicon-rich Si3N4 for quantum dot applications

Autor:	Christopher L. Hinkle, Shakil Mohammed, Michael T. Nimmo, Anton V. Malko
Rok vydání:	2014
Předmět:	Silicon Analytical chemistry chemistry.chemical_element Infrared spectroscopy Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films X-ray photoelectron spectroscopy chemistry Ellipsometry Quantum dot Fourier transform infrared spectroscopy Thin film
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:021507
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.4861338
Popis:	Si-rich Si3N4 (SRN) thin films were investigated to understand the various defect states present within the SRN that can lead to reduced performance in quantum dot based devices made of these materials. The SRN films, deposited by low pressure chemical vapor deposition followed by furnace anneals over a range of temperatures, were determined to be comprised of two distinct phase separated SRN regions with different compositions (precipitates within a host matrix). Photoluminescence (PL) spectra showed multiple peaks convoluted together within the visible and near-visible range. Depending on deposition and annealing conditions, the films displayed changes in PL peak intensities which were correlated with chemical bonding utilizing x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and capacitance–voltage measurements. It is found that the PL originates from defect-state to defect-state and band edge to defect-state electronic transitions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9deafc04a35c7efb397ff0b59ee98ed5 https://doi.org/10.1116/1.4861338 Zobrazit plný text záznamu