Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
| Autor: | A. G. Tandoev, Tigran T. Mnatsakanov, John W. Palmour, M E Levinshtein, S. N. Yurkov |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Gate turn-off thyristor Materials science Silicon business.industry TRIAC chemistry.chemical_element Thyristor 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Integrated gate-commutated thyristor Current injection technique chemistry 0103 physical sciences Optoelectronics Current (fluid) 0210 nano-technology business Gate current |
| Zdroj: | Semiconductors. 51:225-231 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617020257 |
| Popis: | The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4H-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors. |
| Databáze: | OpenAIRE |
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