GaN-based light-emitting diodes using tunnel junctions
| Autor: | Min-A Yu, Myong Soo Cho, Gye Mo Yang, Seong-Ran Jeon |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Electroluminescence Cladding (fiber optics) Atomic and Molecular Physics and Optics law.invention Optics Tunnel junction law Optoelectronics Light emission Electrical and Electronic Engineering business Quantum tunnelling Diode Light-emitting diode |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 8:739-743 |
| ISSN: | 1077-260X |
| DOI: | 10.1109/jstqe.2002.800847 |
| Popis: | We demonstrate GaN-based light-emitting diodes (LEDs) with tunnel junction (TJ) structure and surface-emitting light-emitting diodes with TJ current aperture for lateral current confinement. The p/sup +//n/sup +/ GaN TJs are located in the upper cladding layers of conventional devices, allowing n-type GaN instead of p-type GaN as a top contact layer. The reverse-biased tunnel contact junction provides lateral current spreading without a semitransparent electrode and spatially uniform luminescence exhibiting an improved radiative efficiency. Also, the current confinement aperture for the lateral injection current in the LEDs was defined by mesa etching of a TJ structure and regrowth of the current blocking layer surrounding the TJ mesa. The very uniform light emission just through a buried TJ aperture confirms that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers. |
| Databáze: | OpenAIRE |
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