Two types of traps at the interface characterized by their cross sections
| Autor: | J. Albohn, Ngo Duong Sinh, W. Füssel, K. Kliefoth, H. Flietner, W. Fuhs |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Silicon
Interface (computing) Gaussian Dangling bond Time constant chemistry.chemical_element Nanotechnology Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Capacitance voltage symbols.namesake chemistry Modulation symbols Electrical and Electronic Engineering Dispersion (chemistry) |
| Zdroj: | Microelectronic Engineering. 48:159-162 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(99)00361-5 |
| Popis: | The dispersion behavior of traps at the Si SiO 2 interface has been investigated applying the modulation capacitance voltage method. N-type MOS samples of different material parameters and preparation conditions were used to vary the state density distribution. Two dispersion regions have been resolved in the upper half of the gap which can be described by two Gaussian broadened time constants. The evaluated capture cross sections can be classified in two groups independent of the specific properties of the samples. The cross sections were assigned to two types of silicon dangling bond defects with different back bond configurations. |
| Databáze: | OpenAIRE |
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