| Autor: |
Sjoerd Roorda, M. O. Fortin, R Héliou, R. Poirier, S. Chazal, François Schiettekatte |
| Rok vydání: |
2000 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :425-430 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/s0168-583x(99)01071-x |
| Popis: |
We have investigated the effects of implantation temperature on the extended defect nucleation processes near the threshold dose where these defects appear after annealing. Defects induced by 230 keV P implantation were observed before and after annealing by means of channeling Rutherford backscattering spectroscopy (c-RBS), extended defect delineation etching (Wright etch) and transmission electron microscopy (TEM). It is revealed that the physical nature of the threshold is a steep increase of extended defect areal density, by 5–6 orders of magnitude, between 0.6×10 14 and 2×10 14 P/cm2. The implantation temperature influences this density only at higher doses, for which higher temperatures contribute to reduce the number of extended defects. Second, c-RBS data before annealing show that the number of primary point defects is constant with dose at 300°C whereas it shows a linear dependence for room temperature implantation. This implies that the configuration of the point defects depends on dose and temperature, which strongly influences extended defect nucleation during subsequent annealing. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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