Electron Irradiation of Samsung 8-Gb NAND Flash Memory
| Autor: | Farokh Irom, Larry D. Edmonds, Sergeh Vartanian, Gregory R. Allen, Wousik Kim |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Nuclear and High Energy Physics
Materials science 010308 nuclear & particles physics Nand flash memory Electron Radiation Dose level 01 natural sciences Non-volatile memory Nuclear Energy and Engineering Absorbed dose 0103 physical sciences Bit error rate Electron beam processing Electrical and Electronic Engineering Atomic physics |
| Zdroj: | IEEE Transactions on Nuclear Science. 65:27-33 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2017.2767026 |
| Popis: | This paper reports the results of electron irradiations at various energies of the Samsung 8-Gb single-level cell nand flash memory. The percentage of bit errors from electron exposure is compared to results from 60Co total ionizing dose (TID) measurements. Electron irradiation at low energies (below 2 MeV) causes more bit upsets than 60Co gamma exposures at the same TID level when TID refers to equilibrium dose (as opposed to local dose). Bit upsets increase when electron energy decreases if comparisons are made at the same equilibrium dose level. In particular, 60-MeV electrons are less damaging than 60Co gamma exposures at the same equilibrium dose level while 1-MeV electrons are more damaging. However, all radiation sources produce virtually identical results when comparisons are made at the same local dose level, indicating that charged-particle equilibrium is violated during electron irradiations. |
| Databáze: | OpenAIRE |
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