Application of XRD and its computer simulation in analysis of color band defect in BGO crystal

Autor:	Ning Yonggong, Rong Limei, Bao Shengxiang
Rok vydání:	2001
Předmět:	Diffraction Materials science Structure analysis business.industry Color band Analytical chemistry Condensed Matter Physics Crystallographic defect Bismuth germanate Electronic Optical and Magnetic Materials Structural factor Crystal chemistry.chemical_compound Optics chemistry business
Zdroj:	Ferroelectrics. 259:73-78
ISSN:	1563-5112 0015-0193
DOI:	10.1080/00150190108008719
Popis:	In this paper, the color band in BGO crystal, as accurately undeterminable defect by normal composition and structure analysis, has been analyzed by XRD and its computer simulation, introduction preparation of samples, XRD analysis and step of simulation XRD spectrogram by software Cerius2. The slight changes of relative strength at XRD peaks of BGO samples both with and without color band defect are discussed using structural factor theory of the diffraction and its XRD results are simulated by software Cerius2. Analysis indicates that the color band defect is caused by extra Ge in the BGO crystal and there from formation of Bi vacancies in cell. At the same time it is shown that analysis of the XRD and its computer simulation is an effective way of crystal material examination.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9db8b57f3ead847e173c1ec4cf103b26 https://doi.org/10.1080/00150190108008719 Zobrazit plný text záznamu