Room temperature negative differential resistance in clay-graphite paper transistors
| Autor: | Chun-I Lu, Tilo H. Yang, Shu Ting Yang, Yann Wen Lan, Kristan Bryan Simbulan, Wen Hao Chang |
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| Rok vydání: | 2021 |
| Předmět: |
Drift velocity
Materials science Photoluminescence business.industry Band gap Transistor Contact resistance 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Semiconductor law Optoelectronics General Materials Science Electronics 0210 nano-technology business Quantum tunnelling |
| Zdroj: | Carbon. 176:440-445 |
| ISSN: | 0008-6223 |
| Popis: | Paper electronics have been fast developed in recent years due to their degradability and recyclability; however, most of them are barely equipped with logic functions, impeding them from becoming autonomous on-paper systems. To provide a working unit for logic implementations, a paper field-effect transistor (FET) with a clay-graphite channel that demonstrated negative differential resistance (NDR) is fabricated in this study. The device exhibited a p-type semiconductor characteristic with an optical bandgap of ∼1.97 eV according to photoluminescence analysis, resulting from considerable defective graphite mixed with clay in the channel. Considering that the NDR behavior is theoretically predicted to be tunable by the contact resistance, we fabricated FETs with different contact resistances and observed that the NDR behavior occurred in devices with relatively lower contact resistance. The NDR effect is also tunable by varying the gate voltage, which matches well with simulation results. The possible mechanism for the NDR behavior is the decrease in carrier drift velocity induced by band-to-band tunneling, associated with impurities-induced trapping states and gate-induced confined states. This work provides a promising and easy pathway to develop digital components using paper electronics in the near future. |
| Databáze: | OpenAIRE |
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