Fabrication of field-effect transistors based on Fe3+-doped titania by sol–gel methods
| Autor: | Leo Chau-Kuang Liau, Wen-Wei Chou |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Fabrication
Materials science business.industry Doping Transistor Analytical chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Semiconductor law Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Electronic band structure Voltage Diode |
| Zdroj: | Semiconductor Science and Technology. 24:055007 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/24/5/055007 |
| Popis: | TiO2-based field-effect transistors (FETs) were designed and fabricated using nano-TiO2 and Fe3+-doped TiO2 samples prepared by sol–gel methods. Homo-junction characteristics of nano-TiO2/Fe3+-doped TiO2 films, which perform as a semiconductor diode, were analyzed by current–voltage (I–V) data. Two designs of the metal–semiconductor field effect transistors (MESFETs), back and front gate cases, were fabricated and characterized by I–V measurements. The FET devices were evaluated by analyzing the data of source-drain current versus voltage (Ids–Vds) which are controlled by the gate voltage (Vg). In addition, the effects of the junction diode behavior on the transistor were discussed according to the energy band diagrams of TiO2 and Fe3+-doped TiO2 semiconductors. |
| Databáze: | OpenAIRE |
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