Effects of indium-filling and synthesis pressure on the thermoelectric properties of CoSb3

Autor: L.B. Wang, Hong An Ma, Jie Ming Qin, Tao Zheng, Le Deng, Xiao Peng Jia
Rok vydání: 2014
Předmět:
Zdroj: Modern Physics Letters B. 28:1450118
ISSN: 1793-6640
0217-9849
DOI: 10.1142/s0217984914501188
Popis: In x Co 4 Sb 12 skutterudite compounds have been prepared successfully at different synthesis pressures by high pressure and high temperature (HPHT) method, the processing time has been reduced from a few days to half an hour. In addition, the effect of synthesis pressure on the thermoelectric properties of In 0.4 Co 4 Sb 12 compounds has been investigated in this paper. The structure of In 0.4 Co 4 Sb 12 samples was evaluated by means of X-ray diffraction and scanning electron microscopy (SEM). The Seebeck coefficient, electrical resistivity and thermal conductivity were all measured in the temperature range of room temperature to 673 K. The sample synthesized at 2.0 GPa showed the highest power factor of 29.3 μWcm-1K-2 at 373 K. A dimensionless thermoelectric figure of merit (ZT) of 0.51 at 673 K was achieved for n-type In 0.4 Co 4 Sb 12 prepared at 1.3 GPa, which was significantly enhanced in comparison with pure CoSb 3.
Databáze: OpenAIRE