Effects of indium-filling and synthesis pressure on the thermoelectric properties of CoSb3
Autor: | L.B. Wang, Hong An Ma, Jie Ming Qin, Tao Zheng, Le Deng, Xiao Peng Jia |
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Rok vydání: | 2014 |
Předmět: |
Materials science
Scanning electron microscope Analytical chemistry Statistical and Nonlinear Physics engineering.material Atmospheric temperature range Condensed Matter Physics Thermoelectric materials Thermal conductivity Electrical resistivity and conductivity Seebeck coefficient Thermoelectric effect engineering Skutterudite |
Zdroj: | Modern Physics Letters B. 28:1450118 |
ISSN: | 1793-6640 0217-9849 |
DOI: | 10.1142/s0217984914501188 |
Popis: | In x Co 4 Sb 12 skutterudite compounds have been prepared successfully at different synthesis pressures by high pressure and high temperature (HPHT) method, the processing time has been reduced from a few days to half an hour. In addition, the effect of synthesis pressure on the thermoelectric properties of In 0.4 Co 4 Sb 12 compounds has been investigated in this paper. The structure of In 0.4 Co 4 Sb 12 samples was evaluated by means of X-ray diffraction and scanning electron microscopy (SEM). The Seebeck coefficient, electrical resistivity and thermal conductivity were all measured in the temperature range of room temperature to 673 K. The sample synthesized at 2.0 GPa showed the highest power factor of 29.3 μWcm-1K-2 at 373 K. A dimensionless thermoelectric figure of merit (ZT) of 0.51 at 673 K was achieved for n-type In 0.4 Co 4 Sb 12 prepared at 1.3 GPa, which was significantly enhanced in comparison with pure CoSb 3. |
Databáze: | OpenAIRE |
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