Near-Infrared Photoresponse in Photon-Triggered Nanowire Transistors
| Autor: | Jinsan Kim, Jungkil Kim, Hosung Lee, Jung Min Lee, Min Soo Hwang, Kyoung-Ho Kim, Hong Gyu Park, Hoo Cheol Lee, Ha Reem Kim |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Photon Materials science Fabrication Infrared business.industry Transistor Nanowire Physics::Optics General Physics and Astronomy Photodetector 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Wavelength Computer Science::Emerging Technologies law 0103 physical sciences Optoelectronics 0210 nano-technology business Nanoscopic scale |
| Zdroj: | Journal of the Korean Physical Society. 75:68-72 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.75.68 |
| Popis: | We investigated a photon-triggered nanowire transistor with near-infrared spectral photoresponse. To understand the mechanism of operation of the nanowire transistor consisting of crystalline Si and porous Si segments, we performed a qualitative analysis of trapped carriers in the porous Si and modeling of a transistor operated by photon gating. We then fabricated a photon-triggered transistor device with a nanowire diameter of 200 nm and a porous Si length of 400 nm. Systematic measurements and analyses demonstrate that the wavelength dependence of the photon-triggered current generation is caused by a broad range of energy levels for the localized trap states of the porous Si segment. We believe that these results pave the way for simplification of the fabrication and operation of ultracompact nanoprocessors and development of efficient nanoscale photodetectors for high-resolution imaging. |
| Databáze: | OpenAIRE |
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