Influence of Substrate-Target Distance on Structural and Optical Properties of Ga and (Al + Ga)-doped ZnO Thin Films Deposited by Radio Frequency Sputtering

Autor:	C. Lung, D. Marconi, Aurel Pop, Mariana Pop, Maria Alexandra Toma
Rok vydání:	2019
Předmět:	business.industry Chemistry Band gap Biochemistry (medical) Clinical Biochemistry Doping Substrate (electronics) Microstructure Biochemistry Analytical Chemistry Condensed Matter::Materials Science symbols.namesake Condensed Matter::Superconductivity Electrochemistry Transmittance symbols Optoelectronics Crystallite Thin film business Raman spectroscopy Spectroscopy
Zdroj:	Analytical Letters. 52:2227-2238
ISSN:	1532-236X 0003-2719
DOI:	10.1080/00032719.2019.1606819
Popis:	Ga-doped ZnO and (Ga + Al) co-doped ZnO thin films were deposited on glass substrates by radio frequency magnetron sputtering for three distances d between a substrate–target. The influence of the distance between substrate–target upon structure, microstructure, vibrational properties, and optical band gap of the thin films was analyzed by X-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy, and optical transmission measurements. The diffraction patterns revealed that the ZnO film crystallites are preferentially oriented with the (002) planes parallel to the substrate surface. AFM images show a smooth and uniform surface as well as a high compact structure. The Raman results reveal that the co-doping with Al + Ga introduces 2B1(low) band and leads to the increase of intensity for longitudinal-optic’s band. In the visible region, the average value of the transmittance was above 80%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9d67555615f4511b48a6b7b997452ad6 https://doi.org/10.1080/00032719.2019.1606819 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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