High‐purity epitaxial indium phosphide grown by the hydride technique

Autor:	M. J. McCollum, S. S. Bose, G. E. Stillman, Munho Kim, Byeongdu Lee
Rok vydání:	1988
Předmět:	Electron mobility chemistry.chemical_compound Photoluminescence Physics and Astronomy (miscellaneous) Silicon chemistry Hydride Hall effect Impurity Indium phosphide Analytical chemistry chemistry.chemical_element Epitaxy
Zdroj:	Applied Physics Letters. 53:1868-1870
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.100483
Popis:	Indium phosphide layers with electron mobilities at liquid‐nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.
Databáze:	OpenAIRE
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