Development of a Silicon Membrane-Based Multipixel Hot Electron Bolometer Receiver
| Autor: | A. Trifonov, R. Blundell, Paul K. Grimes, Yury Lobanov, Gregory Goltsman, N. S. Kaurova, Cheuk-yu Edward Tong |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon business.industry Hybrid silicon laser Terahertz radiation Bolometer Silicon on insulator chemistry.chemical_element Substrate (electronics) Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry law 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Antenna (radio) 010306 general physics business 010303 astronomy & astrophysics Layer (electronics) |
| Zdroj: | IEEE Transactions on Applied Superconductivity. 27:1-5 |
| ISSN: | 1558-2515 1051-8223 |
| DOI: | 10.1109/tasc.2017.2665585 |
| Popis: | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a $2\,\times \,2$ array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
| Databáze: | OpenAIRE |
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