Influence of Architecture-Controlled GaN Rod Arrays on the Output Power of GaN LEDs
| Autor: | Cha-Hsin Chao, Shih-Che Hung, Chang-Ho Chen, Ching-Fuh Lin, Shu-Chia Shiu, Ming-Tung Kuo, Ching-Hua Changjean |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
genetic structures business.industry Wide-bandgap semiconductor Resonance Gallium nitride Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Optics chemistry Etching (microfabrication) law Surface roughness Optoelectronics sense organs Dry etching Electrical and Electronic Engineering business Light-emitting diode Diode |
| Zdroj: | IEEE Photonics Technology Letters. 22:1847-1849 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2010.2089444 |
| Popis: | We report the influence of controlled lengths and densities of GaN rod arrays on the output power of GaN light-emitting diodes (LEDs). The morphology-controlled GaN rod arrays are fabricated via using ZnO rod arrays as a dry etching mask. Our investigation indicates that the output power of GaN LEDs has a strong dependence on the lengths and densities of GaN rod arrays. The variation of output power of GaN LEDs with GaN rod arrays is caused by the Fabry-Perot resonance of the film composed by GaN rod arrays. The theoretical analysis also shows a good agreement with the measurement results. |
| Databáze: | OpenAIRE |
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