95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses

Autor:	Walter Rieger, Oliver Häberlen, Martin Pölzl, Maximilian Rösch, Gerhard Nöbauer, S. Leomant, J. Schoiswohl
Rok vydání:	2015
Předmět:	Materials science Silicon business.industry Energy conversion efficiency Electrical engineering chemistry.chemical_element chemistry Gate oxide Trench Optoelectronics Power semiconductor device Power MOSFET business Diode Communication channel
Zdroj:	2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Popis:	A novel 25V silicon trench power MOSFET optimized for fast and high efficient switching with record Ron∗Qg and Ron∗Qoss figure-of-merits is reported. A dual channel structure with two different gate oxide thicknesses allows reducing the body diode conduction losses by up to 50% and enables 95% DC-DC conversion efficiency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9d52a845a30a10c33ead7412dcb354c2 https://doi.org/10.1109/ispsd.2015.7123390 Zobrazit plný text záznamu