Co-simulation EM MoM – HB of Bias Network and the integration of AlGaN/GaN HEMT RF Amplifier for S-Band Operation

Autor: Muhammad Naufal Arira, Basuki Rachmatul Alam
Rok vydání: 2022
Zdroj: 2022 International Symposium on Electronics and Smart Devices (ISESD).
DOI: 10.1109/isesd56103.2022.9980648
Databáze: OpenAIRE