Study of thermal stability of nickel silicide by X-ray reflectivity

Autor: O. Chamirian, Alain M. Jonas, Jorge A. Kittl, Bert Brijs, Anne Lauwers, Karen Maex, Wilfried Vandervorst, Youssef Travaly, M. Van Hove, Timo Sajavaara
Rok vydání: 2005
Předmět:
Zdroj: Microelectronic Engineering. 82:492-496
ISSN: 0167-9317
Popis: The thermal stability of Ni silicide, in comparison to the more conventionally used Co silicide, is studied by X-ray reflectivity. These data were complemented by sheet resistance measurements, transmission electron microscopy, time-of-flight Rutherford backscattering spectrometry, X-ray diffraction and time-of-flight elastic recoil detection analysis.
Databáze: OpenAIRE