Photoelectric diagnostics method for InGaN/GaN multiple-quantum-well heterostructures
| Autor: | G. F. Glinskii, M. V. Baranovskiy, M. S. Mironova |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Photocurrent
Photon Materials science Field (physics) Condensed Matter::Other business.industry Photoconductivity Heterojunction Photoelectric effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Absorption edge Optoelectronics business Quantum well |
| Zdroj: | Semiconductors. 47:58-62 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782613010053 |
| Popis: | Dependences of the photocurrent of InGaN/GaN multiple-quantum-well heterostructures on reverse bias are studied. Features associated with the sequential passage of the boundary of the space-charge region through the quantum wells of the structure under study are found. It is shown experimentally that a reverse-bias region with negative photoconductivity exists for each quantum well. This region vanishes as the energy of optical-excitation photons increases. It is assumed that this effect is caused by a shift of the optical absorption edge in the quantum well, which occurs with partial compensation of the piezoelectric field by the electric field of the p-n junction in the quantum-well region. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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