Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range
| Autor: | J.C. Dupuy, Reinhard Kögler, G. Prudon, Angela Perrat-Mabilon, Brice Gautier, Shavkat Akhmadaliev, C. Dubois, Christophe Peaucelle |
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| Rok vydání: | 2010 |
| Předmět: |
Range (particle radiation)
Silicon Chemistry Oxygene Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Function (mathematics) Condensed Matter Physics Oxygen Surfaces Coatings and Films Ion Materials Chemistry Limiting oxygen concentration Boron computer computer.programming_language |
| Zdroj: | Surface and Interface Analysis. 43:137-140 |
| ISSN: | 0142-2421 |
| Popis: | Specific samples containing 18 O and 16 O are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen concentration. 18 O and 16 O are used to implement an Isotopic Comparative Method (ICM) which allows to correct the matrix effects involved by the presence of a high concentration of oxygen in the sample: the near-flat profile of 18 O, measured in the 'dilute', linear regime (weak concentration) is used to calculate the real concentration of 16 O. The ion yields of B + , O + , Si + , O - and Si - are measured as a function of the oxygen concentration. For B + ion yield, the variation is important whereas they are weak for Si ± and O ± ion yields for the range [0-12 at.%]. This ICM applied to oxygen in silicon can be considered as an interesting complementary method of previous 16 O implantation method' and of 18 O single marker method'. |
| Databáze: | OpenAIRE |
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