Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System
| Autor: | Baohua Li, Perry C. Grant, Seyed Amir Ghetmiri, Joshua M. Grant, Abbas Sabbar, Wei Dou, Shui-Qing Yu, Aboozar Mosleh, Zhong Chen, Fatma Yurtsever, Hameed A. Naseem, Bader Alharthi, Mansour Mortazavi |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Diffraction Materials science Solid-state physics business.industry Plane (geometry) 02 engineering and technology Surface finish Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Characterization (materials science) Transmission electron microscopy 0103 physical sciences Materials Chemistry Sapphire Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Electronic Materials. 49:4809-4815 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-020-08169-9 |
| Popis: | Silicon–germanium (SiGe) films have been grown using chemical vapor deposition on c-plane sapphire substrates. Optical and material characterization of the films show successful alloying of SiGe up to 22.4% Si. X-ray diffraction characterizations show that the SiGe films are oriented in the (111) direction on the sapphire (0001) substrates. However, 60°-rotated twin defects are observed as well. Transmission electron microscopy (TEM) shows crystalline growth of the film. The high surface roughness observed in the TEM images and the atomic force microscopy scans of the films indicates the formation of two different orientations of SiGe on sapphire substrates. |
| Databáze: | OpenAIRE |
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