Red to green photoluminescence of InP-quantum dots in InP
| Autor: | Wolfgang-Michael Schulz, Michael Jetter, M. Reischle, Peter Michler, G. J. Beirne, Robert Roßbach |
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| Rok vydání: | 2007 |
| Předmět: |
Diffusion transport
Photoluminescence Diffusion Time resolved spectra Nanostructured materials Analytical chemistry chemistry.chemical_element Time resolution Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Molecular physics Inorganic Chemistry Condensed Matter::Materials Science chemistry Quantum dot Materials Chemistry Gallium |
| Zdroj: | Journal of Crystal Growth. 298:595-598 |
| ISSN: | 0022-0248 |
| Popis: | InP-quantum dots were grown in between different Al-containing Al x Ga 1-x InP barriers in order to increase their emission energy and localization energy. We observed emission energies from 1.85eV (670 nm) to 2.24eV (554 nm). From time-resolved photoluminescence measurements performed at different temperatures we found a strong dependence of the excitonic decay times both on the Al-content of the barrier and the growth temperature of the quantum dots due to diffusion of Al and Ga from the barrier into the dots. |
| Databáze: | OpenAIRE |
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