Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs
| Autor: | Sajal K. Paul, J. B. Roy, P. K. Basu |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
chemistry.chemical_classification
Work (thermodynamics) Condensed matter physics business.industry Band gap Chemistry General Physics and Astronomy Mineralogy Condensed Matter::Materials Science Semiconductor Charge carrier business Electronic band structure Chemical composition Inorganic compound Solid solution |
| Zdroj: | Journal of Applied Physics. 69:827-829 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.348919 |
| Popis: | The band gap and the intrinsic carrier concentration in a semiconductor are important material parameters needed in the interpretation of various experimental and theoretical data. In the present work, empirical expressions for both the parameters as a function of alloy composition x and temperature are proposed for GaxIn1−xAs. The calculated results for band gap are in close agreement with the available data, while the same for intrinsic concentration give fair agreement with the data at the two ends of the alloy composition. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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