Properties of stacked NbN tunnel junctions
| Autor: | H. J. Hedbabny, Horst Rogalla |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Josephson effect
Fabrication High-temperature superconductivity Materials science Condensed matter physics business.industry Electronic Optical and Magnetic Materials law.invention Stack (abstract data type) law Etching (microfabrication) Electrode Optoelectronics Electrical and Electronic Engineering business Quantum tunnelling Microwave |
| Zdroj: | IEEE Transactions on Magnetics. 25:1231-1234 |
| ISSN: | 0018-9464 |
| Popis: | Stacks of up to three tunnel junctions were fabricated using the NbN-MgO technique. Different preparation methods were tested, and two gave favorable results. In the first one, the whole stack is prepared in situ and structured afterwards by lift-off and reactive and argon ion etching. The authors investigated the resulting I-V (current-voltage) characteristics of stacks of 8.3 mV. Since it was not possible to establish electrical connections to the intermediate electrodes by this method, a second one was applied in which each NbN/MgO layer is prepared in a separate step and structured by lift-off. Here the I-V characteristics, the interaction between the tunnel junctions, and their RF properties were investigated. Shapiro steps and photon-assisted tunneling were observed in the I-V characteristics of a receiver junction, while the bottom tunnel junctions were used as microwave generators. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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