Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation
| Autor: | Hirokuni Asamizu, Hidenori Kitai, Ryosuke Iijima, Johji Nishio, Kazutoshi Kojima, Shinsuke Harada, Akira Miyasaka, Mitsuhiro Kushibe, Ryoji Kosugi |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) Mechanical Engineering 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:432-435 |
| ISSN: | 1662-9752 |
| Popis: | Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs for the 150 µm thick epitaxial layer. The internal carrier lifetime was estimated as 21 µs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face. |
| Databáze: | OpenAIRE |
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