The dynamic gradient freeze growth of (Ti + Zn) doped semi-insulating InP
| Autor: | R. L. Barns, H. Brown, P. M. Bridenbaugh, A. Carter, E. M. Monberg |
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| Rok vydání: | 1990 |
| Předmět: |
Materials science
Mechanical Engineering Doping Analytical chemistry Mineralogy chemistry.chemical_element Crystal growth Activation energy Condensed Matter Physics chemistry Mechanics of Materials Electrical resistivity and conductivity X-ray crystallography General Materials Science Single crystal Powder diffraction Titanium |
| Zdroj: | Materials Science and Engineering: B. 6:29-32 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(90)90110-w |
| Popis: | High quality single crystals of semi-insulating InP were grown by the electrodynamic gradient freeze technique. The material is co-doped with the shallow acceptor zinc and the deep donor titanium. Resistivities in the 105−106 Ω cm range were measured with corresponding mobilities of 2500 cm2 V−1s−1. Variable temperature Hall measurements resulted in an activation energy 0.61 ± 0.03 eV below the conduction band. The dislocation density is less than 500 cm−2 and is the lowest ever reported for comparably sized semi-insulating InP bulk crystals. Precipitates containing titanium and phosphorus were found when the titatium concentration exceeded 3 × 1016 cm−3. A distribution coefficient of 4 × 10−4 was measured for titanium in InP. The precipitates have been identified for the first time as hexagonal TiP using X-ray powder diffraction. |
| Databáze: | OpenAIRE |
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