Modeling the small-emitter effect in polysilicon-emitter transistors
| Autor: | M.J. Saccamango, P.P. Peressini, B. Cunningham, Somnuk Ratanaphanyarat, Ronald W. Knepper, K. DeVries, Lawrence F. Wagner, P. Strugazow, J.L. Snare, S.F. Chu, S.E. Fischer, P.T. Nguyen, Kyong-Min Kim, A. Lucchese |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Bipolar junction transistor Doping Transistor Process (computing) Semiconductor device modeling chemistry.chemical_element law.invention Ion implantation chemistry law ComputerApplications_GENERAL Physics::Accelerator Physics Optoelectronics business Common emitter |
| Zdroj: | Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting. |
| DOI: | 10.1109/bipol.1992.274067 |
| Popis: | Arsenic shadowing, which is an important consideration for the small-emitter effect in bipolar polysilicon-emitter transistors, was simulated using two-dimensional process and device modeling tools. Results are compared with data for conventional and epi-base polysilicon-emitter technologies. Consideration is also given to other parameters that affect the base current. This analysis shows that the principle features of the arsenic shadowing effect can be modeled and explained by using the simulation tools. These simulations showed that the small-emitter effect was still present in the more advanced epi-base devices. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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