Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices
| Autor: | Eric N. Jin, Brian P. Downey, J.A. Roussos, Vikrant J. Gokhale, David J. Meyer, Matthew T. Hardy |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Surface acoustic wave Diamond Heterojunction Gain compression 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Piezoelectricity Wavelength 0103 physical sciences engineering Optoelectronics 0210 nano-technology business 010301 acoustics Molecular beam epitaxy |
| Zdroj: | 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS). |
| DOI: | 10.1109/mems46641.2020.9056271 |
| Popis: | This report presents some of the first experimental characterization of surface acoustic wave (SAW) devices using single-crystal ScAlN epitaxially grown on SiC. Due to the excellent wave guiding provided by the ScAlN/SiC heterostructure, SAW phase velocities greater than 12,000 m/s are measured, higher than comparable ScAlN SAW devices on other substrates. The phase velocity dispersion for measured devices compares well with simulated values. We observe up to $k^{2}=0.52{\%}$ even for very small thickness to wavelength ratios ( $t/\lambda ). We show that epitaxial ScAlN/SiC can achieve extremely low SAW propagation loss ( $\alpha ), comparable to state-of-the-art piezoelectric/diamond SAW devices, and are linear at CW RF power levels up to ≈30 dBm (1W), with 1 dB gain compression at 34 dBm and an IIP3 of 45 dBm. |
| Databáze: | OpenAIRE |
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