Properties of Be-implanted planar GaAs p-n junctions
| Autor: | K. V. Vaidyanathan, B. G. Streetman, M.J. Helix |
|---|---|
| Rok vydání: | 1978 |
| Předmět: |
Fabrication
Materials science business.industry Annealing (metallurgy) chemistry.chemical_element Gallium arsenide chemistry.chemical_compound Planar Ion implantation chemistry Electronic engineering Optoelectronics Breakdown voltage Leakage current density Electrical and Electronic Engineering Beryllium business |
| Zdroj: | IEEE Journal of Solid-State Circuits. 13:426-429 |
| ISSN: | 0018-9200 |
| DOI: | 10.1109/jssc.1978.1051072 |
| Popis: | The fabrication and characteristics of planar junctions in GaAs formed by Be ion implantation are discussed. The critical processing step is shown to be the use of a carefully deposited oxygen-free Si/SUB 3/N/SUB 4/ encapsulation during post-implantation annealing. Forward and reverse characteristics are presented for Be-implanted junctions formed by encapsulating with SiO/SUB 2/, Si/SUB x/O/SUB y/N/SUB z/, or Si/SUB 3/N/SUB 4/ layers prior to annealing at 900/spl deg/C. Junctions which exhibit leakage current density of ~2/spl times/10/SUP -7/ A/cm/SUP 2/ at 80 V reverse bias and breakdown voltage >200 V have been fabricated using RF-plasma deposited Si/SUB 3/N/SUB 4/ layers as the encapsulant. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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