MOCVD growth of spherical aggregates of SiC nanocrystallites
| Autor: | Hideo Kohno, Seiji Takeda, Satoshi Ichikawa, Shuhei Takao |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Nanostructure Scanning electron microscope Nanowire General Physics and Astronomy Nanotechnology Surfaces and Interfaces General Chemistry Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry.chemical_compound chemistry Electron diffraction Chemical engineering law Silicon carbide Metalorganic vapour phase epitaxy Electron microscope |
| Zdroj: | Applied Surface Science. 254:7630-7632 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2008.01.126 |
| Popis: | Spherical aggregates of SiC nanocrystallites can be grown in addition to SiC nanowires via metal organic chemical vapor deposition using methylvinyldichlorosilane as a source gas and Ni catalyst by controlling the growth temperature and the pressure of the source gas. Electron microscopy observations show that the aggregates are typically 300 nm in diameter, which consist of SiC nanocrystallites of about 5 nm in diameter. Electron diffraction reveals that the nanocrystallites have the 3C structure. |
| Databáze: | OpenAIRE |
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