Autor:	D.N. Nguyen, F. Irom
Rok vydání:	2007
Předmět:	Magnetoresistive random-access memory CMOS Event (computing) business.industry Computer science Electrical engineering Electronic engineering Radiation business
Zdroj:	2007 9th European Conference on Radiation and Its Effects on Components and Systems.
Popis:	We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9ce3e5aa00d5943c4b21340f75fec22e https://doi.org/10.1109/radecs.2007.5205554 Zobrazit plný text záznamu