Characterization of Si and SiOxfilms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors
| Autor: | Takayuki Sakaguchi, Kiyoshi Yasutake, WeiCheng Lin, Hiroaki Kakiuchi, Hiromasa Ohmi, Takahiro Yamada, Shogo Tamaki |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Fabrication Silicon business.industry chemistry.chemical_element Atmospheric-pressure plasma Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry Thin-film transistor Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film business Silicon oxide Power density |
| Zdroj: | physica status solidi (a). 212:1571-1577 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201532328 |
| Popis: | Silicon (Si) and its alloys, such as silicon oxides (SiOx) and silicon nitrides, are indispensable thin film materials for the fabrication of large-area electronic devices. The goal of the present study is to develop a highly efficient deposition technology for good-quality hydrogenated amorphous Si (a-Si), microcrystalline Si (µc-Si), and SiOx films on flexible polymer substrates. For this purpose, we have been using atmospheric-pressure (AP) plasma excited by a 150 MHz very high-frequency (VHF) power. The changes of thickness and structure of the Si and SiOx films in the gas flow direction were studied as a function of distance from the plasma entrance, VHF power density, and gas flow rates. Based on the results, the performance of bottom-gate TFTs with the Si channel and SiOx gate insulator layers being deposited using AP-VHF plasma were examined to test the applicability of the Si and SiOx films to actual TFTs. A TFT with a field-effect mobility of ∼1.7 cm2 V−1s−1 was obtained at a temperature of 120 °C. |
| Databáze: | OpenAIRE |
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