Buried metallic layers in silicon using wafer fusion bonding techniques

Autor:	H.S. Gamble, B.M. Armstrong, W.L. Goh
Rok vydání:	2002
Předmět:	Materials science Silicon Wafer bonding Metallurgy chemistry.chemical_element Direct bonding chemistry.chemical_compound chemistry Anodic bonding Titanium disilicide Silicide Wafer Composite material Titanium
Zdroj:	Proceedings of MELECON '94. Mediterranean Electrotechnical Conference.
DOI:	10.1109/melcon.1994.381013
Popis:	Technologies for the production of buried titanium disilicide layers in silicon are described. Silicide direct bonding to silicon dioxide has required thinning of the wafer to provide void free bonding. Bonding of titanium coated silicon to silicon or silicon dioxide by silicide formation has been found to provide a better process with higher yield for void free bonds. Thermal stability of titanium disilicide at 1000/spl deg/C has been shown to be compromised if the titanium disilicide is bonded directly to silicon dioxide. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9cc7ce8eeff0e2e708c45eaf93987ab7 https://doi.org/10.1109/melcon.1994.381013 Zobrazit plný text záznamu