Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
| Autor: | Eric Daniel Jones, R. M. Sieg, Steven R. Kurtz, C. H. Seager, Andrew A. Allerman |
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| Rok vydání: | 2000 |
| Předmět: |
Electron mobility
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Mean free path Photoconductivity Doping Carrier lifetime Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Hall effect Diffusion (business) |
| Zdroj: | Applied Physics Letters. 77:400-402 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge. |
| Databáze: | OpenAIRE |
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