Structure of neutron-induced defect clusters in GaAs MESFETs
| Autor: | E. V. Kiseleva, S. V. Obolenskii |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Structure (category theory) Heterojunction Condensed Matter Physics Crystallographic defect Electronic Optical and Magnetic Materials Semiconductor Materials Chemistry Cluster (physics) Optoelectronics Neutron Electrical and Electronic Engineering business Neutron irradiation Nanoscopic scale |
| Zdroj: | Russian Microelectronics. 35:322-328 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739706050076 |
| Popis: | A method is proposed for the structural investigation of defect clusters produced by neutron irradiation of semiconductors. It involves simulation of defect formation and analysis of the distribution of point defects within individual clusters. The method enables one to characterize point-defect aggregations in a cluster in terms of size, separation, and arrangement. It could be applied to advanced devices based on a nanoscale heterostructure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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