X-ray detectors based on epitaxial gallium arsenide

Autor:	E. P. Drugova, M. A. Lelekov, V. A. Chubirko, O. P. Tolbanov, D. Yu. Mokeev, M. D. Vilisova, I. V. Ponomarev, L.P. Porokhovnichenko, G. I. Ayzenshtat
Rok vydání:	2006
Předmět:	Physics Physics and Astronomy (miscellaneous) business.industry X-ray detector Electron Epitaxy Space charge Particle detector Semiconductor detector Gallium arsenide chemistry.chemical_compound chemistry Electric field Optoelectronics business
Zdroj:	Technical Physics. 51:1008-1011
ISSN:	1090-6525 1063-7842
DOI:	10.1134/s1063784206080093
Popis:	Two types of photovoltaic X-ray detectors based on intrinsic and chromium-compensated epitaxial gallium arsenide are studied. The amplitude spectra taken with different radioactive sources show that the efficiency of charge collection in these detectors is no higher than 60%. While in the detectors made from intrinsic epitaxial GaAs (a free electron concentration on the order of 1012 cm−3) incomplete charge collection is related to a nonuniform electric field generated by the space charge of deep levels, in the structures based on the chromium-compensated epitaxial material with specific resistance ρ ∼ 108 Ω cm, incomplete charge collection is caused by intense capture of holes. It is shown that, in the latter structures, the lifetime of nonequilibrium electrons is rather high and may reach 40 ns.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9cae211f2323e31a9ccbaf79d4468597 https://doi.org/10.1134/s1063784206080093 Zobrazit plný text záznamu Plný text ve formátu PDF