Observation of degradation and recovery of stacked HfOx/ZrOy/HfOx MOSFETs
| Autor: | Shuang-Yuan Chen, Shun-Ping Sung, Heng-Sheng Huang, Chih-Chieh Chang, Shea-Jue Wang, Mu-Chun Wang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Dielectric strength business.industry Annealing (metallurgy) Gate dielectric chemistry.chemical_element 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Hafnium Atomic layer deposition chemistry Logic gate 0103 physical sciences Optoelectronics SILC 0210 nano-technology business |
| Zdroj: | 2018 7th International Symposium on Next Generation Electronics (ISNE). |
| DOI: | 10.1109/isne.2018.8394625 |
| Popis: | The 28nm hafnium-based gate dielectric with a profile of HfOx/ZrOy/HfOz (HZH) was deposited by atomic layer deposition (ALD) technology. Different nitridation and annealing process conditions on stacked high-k layers were applied to probe the promotion of device performance. One of the effective stress methods to expose the dielectric integrity is the voltage-ramping dielectric breakdown (VRDB). Using this stress method with forward or backward bias, the degradation or recovery efficiency for the tested devices can be exhibited with the performance of stress induced leakage current (SILC), soft breakdown (SBD), progressive breakdown (PBD), and hard breakdown (HBD). The possible degradation and recovery mechanisms are also studied to figure out the relationship of nitridation and annealing impacting the quality of high-k layers. |
| Databáze: | OpenAIRE |
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