Double patterning lithography study with high overlay accuracy

Autor:	Yuuki Ishii, Ryo Tanaka, Andrew J. Hazelton, Masahiko Yasuda, Takahisa Kikuchi, Yosuke Shirata, Kengo Takemasa, Yasuhiro Iriuchijima
Rok vydání:	2010
Předmět:	Scanner Materials science business.industry Overlay law.invention Optics law Multiple patterning Node (circuits) Photolithography business Lithography Immersion lithography Next-generation lithography
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.846486
Popis:	Double patterning (DP) has become the most likely candidate to extend immersion lithography to the 32 nm node and beyond. This paper focuses on experimental results of 32nm half pitch patterning using NSR-S620D, the latest Nikon ArF immersion scanner. A litho-freeze-litho (LFL) process was employed for this experiment. Experimental results of line CDU, space CDU, and overlay accuracy are presented. Finally, a budget for pitch splitting DP at the 22 nm half pitch is presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9ca6149960300f71a4c88a2c4cd5fe41 https://doi.org/10.1117/12.846486 Zobrazit plný text záznamu