Study on the band alignment of GaN/CH3NH3PbBr3 heterojunction by x-ray photoelectron spectroscopy
| Autor: | Xuefeng Xia, Xingcan Feng, Li Wang, Shitao Liu, Jinhui Gong, Yuandan He, Zhijue Quan |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Band gap Wide-bandgap semiconductor Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Semimetal Band offset Organic semiconductor Atomic layer deposition X-ray photoelectron spectroscopy 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | Applied Physics Letters. 111:122103 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4997229 |
| Popis: | A GaN/CH3NH3PbBr3 heterojunction was fabricated by depositing a GaN thin layer on a CH3NH3PbBr3 single crystal by plasma enhanced atomic layer deposition. The band alignment of the GaN/CH3NH3PbBr3 heterojunction was studied by x-ray photoelectron spectroscopy. The valance band offset (VBO) is directly determined to be 0.13 ± 0.08 eV. The conduction band offset is deduced from the VBO and the band gaps, which turned out to be 1.39 ± 0.12 eV. Thus, the band alignment of the GaN/CH3NH3PbBr3 heterojunction is determined to be type-I. These results show that GaN is a promising material for carrier confinement in halide perovskite based light emitting devices. |
| Databáze: | OpenAIRE |
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