Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy
| Autor: | V. N. Shabanov, V. P. Kuznetsov, D. I. Kryzhov, G. A. Maksimov, D. Yu. Remizov, A. N. Shushunov, O. V. Belova, M. V. Stepikhova, Z. F. Krasilnik, R. A. Rubtsova |
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| Rok vydání: | 2006 |
| Předmět: |
Free electron model
Materials science Silicon business.industry Doping chemistry.chemical_element Electroluminescence Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Optoelectronics Sublimation (phase transition) business Molecular beam epitaxy Diode |
| Zdroj: | Semiconductors. 40:846-853 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | In Si:Er/Si diode structures grown by sublimation molecular-beam epitaxy in a vacuum with a pressure of ∼10−7 mbar at temperatures 520–580°C, the intensity of room-temperature electroluminescence at 1.54 μm is studied as a function of the concentration and distribution of erbium and donor impurities in the space-charge region (SCR) and the SCR width. Methods for obtaining electroluminescence in diodes with a wide (0.1–1 μm) SCR are developed. The mean free path of electrons with respect to their interaction with Er centers and the threshold energy a free electron needs in order to excite an Er-shell electron are determined. The values of electric-field strength corresponding to breakdown in silicon p-i-n diodes with and without Er doping are obtained experimentally. A model describing the interaction of hot electrons with Er centers is suggested. |
| Databáze: | OpenAIRE |
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