| Popis: |
As critical dimension uniformity requirements tighten for advanced technology nodes, it becomes increasingly important to characterize and correct for systematic sources of critical dimension error in mask manufacturing. A long range proximity effect has been previously reported in the industry to occur in chemically amplified resists that appears to be related to the develop process and we call this phenomenon chemical flare. Several attempts to modulate this effect have been characterized and at least one develop nozzle modification has been found to reduce chemical flare by ~50%. In addition, develop time, develop and rinse processes, and top anti-reflective coatings have been evaluated as methods of minimizing chemical flare effects in e-beam lithography applications. Positive and negative chemically amplified ebeam resists have been evaluated and characterized for this effect. |
