Investigation of Self-Heating Effects in Vacuum Gate Dielectric Gate-all-Around Vertically Stacked Silicon Nanowire Field Effect Transistors
| Autor: | Junhua Lai, Li Sun, Yali Su |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Gate dielectric chemistry.chemical_element Dielectric Conductivity 01 natural sciences Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Thermal conductivity chemistry Heat generation 0103 physical sciences Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 67:4085-4091 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2020.3017452 |
| Popis: | The self-heating effects in vacuum gate dielectric gate-all-around field effect transistors (GAA FETs) with vertically stacked 4-nm silicon nanowire (SiNW) channels are investigated by 3-D TCAD simulation. The cross-sectional dimension-dependent thermal conductivity model of the SiNW is proposed for the precise numerical simulation of self-heating effects based on the temperature-dependent thermal conductivity of the bulk silicon. The thermal conductivity model which was verified by published data indicates that thermal conductivity of 4-nm SiNW is greatly reduced to below 10 W/mK due to the pronounced phonon boundary scattering. Simulation results shows that the vacuum gate dielectric devices undergo more severe self-heating effects than the solid gate dielectric GAA SiNW FETs, resulting in more serious performance degradation. Multiple heat sources generated by the three-stacked SiNWs make heat generation and diffusion more difficult. An effective method is proposed to suppress the self-heating effects by increasing the spacing of the gas gap within in a certain range and the around ambient gas pressure. |
| Databáze: | OpenAIRE |
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