Diluted magnetic semiconductor (Cd1−xMnxTe) Schottky diodes and field‐effect transistors

Autor:	R. L. Harper, J. R. Tassitino, S. Hwang, R. M. Kolbas, D. L. Dreifus, J. F. Schetzina
Rok vydání:	1988
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Schottky effect Schottky diode Magnetic semiconductor Semiconductor device law.invention law Optoelectronics Field-effect transistor business Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 53:1279-1281
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.99997
Popis:	We report the first demonstration of electronic devices, Schottky diodes, and metal‐semiconductor field‐effect transistors, in a diluted magnetic semiconductor Cd1−xMnxTe. These devices were fabricated using n‐type, indium‐doped CdMnTe films grown by photoassisted molecular beam epitaxy on (100) CdTe and CdZnTe substrates. Epitaxial layers with carrier concentrations of 1×1017 cm−3 and electron mobilities as large as 720 cm2/V s at 120 K were used. The Schottky diodes have turn‐on voltages of 0.8 V, idealities in the range between 1.27 and 1.7, and reverse breakdown voltages from 5.5 to 10.5 V reverse bias. The 100 μm gate length transistors have transconductances of 1 mS/mm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9c86cf298da196d29a94de4bb939e923 https://doi.org/10.1063/1.99997 Zobrazit plný text záznamu