Radiation hardness of ZnO at low temperatures
| Autor: | David C. Look, J. R. Sizelove, G. C. Farlow, C. Coşkun |
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| Rok vydání: | 2004 |
| Předmět: |
Chemistry
Semiconductor materials Analytical chemistry Chemical vapor deposition Electron Condensed Matter Physics Electronic Optical and Magnetic Materials Hall effect Materials Chemistry Electron beam processing Irradiation Electrical and Electronic Engineering Radiation hardening Nuclear chemistry |
| Zdroj: | Semiconductor Science and Technology. 19:752-754 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 µA cm−2 irradiation. It is concluded that long-term damage in ZnO is limited by defect annihilations that are rapid on the time scale of the experiment ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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