Electrical Noise and Transport Properties of Graphene

Autor: Nan Sun, Huili Xing, Steven Ruggiero, Kristof Tahy, Debdeep Jena, Gerald B. Arnold
Rok vydání: 2013
Předmět:
Zdroj: Journal of Low Temperature Physics. 172:202-211
ISSN: 1573-7357
0022-2291
DOI: 10.1007/s10909-013-0866-x
Popis: We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorpo- rates trap position, energy, and barrier height for tunneling into a given trap—along with the band-structure of the graphene—and is in good accord with the general char- acteristics of the data.
Databáze: OpenAIRE