Electrical Noise and Transport Properties of Graphene
Autor: | Nan Sun, Huili Xing, Steven Ruggiero, Kristof Tahy, Debdeep Jena, Gerald B. Arnold |
---|---|
Rok vydání: | 2013 |
Předmět: | |
Zdroj: | Journal of Low Temperature Physics. 172:202-211 |
ISSN: | 1573-7357 0022-2291 |
DOI: | 10.1007/s10909-013-0866-x |
Popis: | We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorpo- rates trap position, energy, and barrier height for tunneling into a given trap—along with the band-structure of the graphene—and is in good accord with the general char- acteristics of the data. |
Databáze: | OpenAIRE |
Externí odkaz: |