| Autor: |
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
2020 IEEE Silicon Nanoelectronics Workshop (SNW). |
| Popis: |
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hopping conduction fittings also indicated a depletion of n c due to an increase of V stop as shown by an increase of trap-to-trap distance (a) and trap energy (ϕ T ). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
