A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy
| Autor: | Ryan J. Waskiewicz, Chadwin D. Young, Patrick M. Lenahan, Nicholas J. Harmon, James P. Ashton, Colin G. Mckay, Kenneth J. Myers, Michael E. Flatté, Stephen J. Moxim |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Magnetoresistance Silicon 010308 nuclear & particles physics business.industry Transistor chemistry.chemical_element Integrated circuit Radiation 01 natural sciences law.invention Nuclear Energy and Engineering chemistry law 0103 physical sciences Radiation damage Optoelectronics Electrical and Electronic Engineering Spectroscopy business Quantum tunnelling |
| Zdroj: | IEEE Transactions on Nuclear Science. 66:428-436 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechanisms of radiation damage in 3-D integrated circuits. In our study, we explore radiation damage in structures relevant to 3-D integrated circuits, but not on 3-D test structures themselves. Five structures of great technological importance to 3-D integrated circuits are investigated. We utilize both NZFMR and electrically detected magnetic resonance to investigate radiation effects in these structures. The structures involved in this paper are planar silicon metal–oxide–semiconductor field-effect transistors, silicon–germanium alloy-based transistors, fin-based transistors, silicon dioxide-based flowable oxides, and low-k dielectrics. Our study indicates that NZFMR has great potential in radiation damage studies, with exceptional promise in systems in which more conventional resonance is not possible. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|